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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1683
DESCRIPTION *With TO-220C package *Complement to type 2SA843 *High breakdown voltage *Large collector power dissipation APPLICATIONS *Audio frequency power amplifier *Color TV vertical deflection output
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 150 5 500 2 20 150 -50~150 UNIT V V V mA A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=5mA ; IB=0 IC=0.5mA ; IE=0 IE=0.5mA ; IC=0 IC=500mA; IB=50mA IC=400m A ; VCE=10V VCB=200V ;IE=0 VEB=4V; IC=0 IC=400m A ; VCE=10V 60 MIN 150 200 5
2SC1683
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE
TYP.
MAX
UNIT V V V
1.0 1.0 50 50 200
V V A A
hFE Classifications P 60-140 Q 85-200
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1683
Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)
3


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